| PART |
Description |
Maker |
| CGH25120F CGH25120F-TB CGH25120F-AMP |
120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE
|
Cree, Inc
|
| CGH27060F |
60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| SKY73035-11 SKY73035 |
2300 - 2700 MHz High Gain and Linearity Single Downconversion Mixer for 2G/3G Base Station Applications
|
Skyworks Solutions Inc.
|
| 23A005 |
0.5 W, 20 V, 2300 MHz common emitter transistor
0.5 Watts, 20 Volts, Class A Linear to 2300 MHz
|
GHZTECH[GHz Technology]
|
| CGHV14800F-AMP CGHV14800-TB |
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| ADL532008 ADL5320-EVALZ ADL5320ARKZ-R7 ADL5320 |
400 MHz to 2700 MHz Pre-driver RF Amplifier 400 MHz - 2700 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
400 MHz to 2700 MHz RF Driver Amplifier
|
Analog Devices, Inc.
|
| CGH40006P-AMP |
6 W, RF Power GaN HEMT
|
Cree, Inc
|
| TGI0910-50 |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| CG2H80060D |
60 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
|
