| PART |
Description |
Maker |
| VBUS052CD-FAH |
2-Line BUS-Port ESD-Protection - Flow Through Design
|
Vishay Siliconix
|
| VBUS54FD-SD1 |
4-Line BUS-Port ESD Protection Array - Flow Through Design
|
Vishay Siliconix
|
| GS880Z18AT-166 GS880Z18AT-250I GS880Z36AT-166 GS88 |
2 MG 3.3V OTP PROM (UMC) - NOT RECOMMENDED for NEW DESIGN 9MB的流水线和流量，通过同步唑的SRAM
9Mb Pipelined and Flow Through Synchronous NBT SRAM 9MB的流水线和流量，通过同步唑的SRAM
|
GSI Technology
Electronic Theatre Controls, Inc.
|
| 0638160500 0638160700 |
AIR POWERED TOOL Operating and Maintenance Instructions
AIR POWERED TOOL AIR POWERED TOOL
|
Molex Electronics Ltd.
|
| IRMCV201 |
Verilog Control Libraries, and complete FOC algorithm, plus ServoDesigner Tool
Complete Motion Control Verilog Library Accelerator Verilog Code Development Tool
|
International Rectifier
|
| CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72）流体系结构，通过与总线延迟（带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72）流的SRAM
|
Cypress Semiconductor Corp.
|
| GS881Z18AT-133 GS881Z18AT-133I GS881Z18AT-150 GS88 |
133MHz 8.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
150MHz 7.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
166MHz 7ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
200MHz 6.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
225MHz 6ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
250MHz 5.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
| 24C04 ST25C04 ST25C04B1TR ST25C04B3TR ST25C04B5TR |
KIT, NIOS FOR CYCLONE II; Kit contents:Nios II Development Board, Nios II IDE, Quartus II Web Edition design software, SOPC Builder system integration tool, Cables and accessories, Design examples and applications RoHS Compliant: Yes
IC MAX 7000 CPLD 256 208-PQFP
PowerPak; Charge, gate n-channel:27nC; Current, Idm pulse:40A; Depth, external:5.26mm; RoHS Compliant: Yes
MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:80V; Case style:PowerPak SO-8; Current, Id cont:7.6A
(ST2xxx) 4 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
From old datasheet system
4 Kbit Serial I 2 C Bus EEPROM with User-Defined Block Write Protection
4KbitSerialI2CBusEEPROMwithUser-DefinedBlockWriteProtection
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| 18074 18074-6 |
HTSNK C X-FLOW .4H LOW FLOW THRU HOLE
HTSNK, C X-FLOW, .4H LOW FLOW THRU HOLE
|
VICOR[Vicor Corporation]
|
| 18068 18068-6 |
HTSNK A X-FLOW .4H LOW FLOW THRU HOLE
HTSNK, A X-FLOW, .4H LOW FLOW, THRU HOLE
|
VICOR[Vicor Corporation]
|
