| PART |
Description |
Maker |
| STW70N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STF28N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| CZTA44 |
NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR
|
Central Semiconductor Corp
|
| FDG312P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| CMPTA44 |
NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| CES2321 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2313A |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| SI2301 |
High dense cell design for extremely low RDS(ON)
|
MAKO SEMICONDUCTOR CO.,...
|
| FDC6312P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2303 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| STBP60L60A |
Super high dense cell design for extremely low RDS(ON).7
|
SamHop Microelectronics...
|
