| PART |
Description |
Maker |
| SHB636053E |
HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE 5 A, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
|
Sensitron Semiconductor
|
| LSIC2SD120C10 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
Littelfuse
|
| SHD619112P |
HERMETIC SILICON CARBIDE RECTIFIER
10 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE
|
SENSITRON SEMICONDUCTOR
|
| LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
| CPMF-1200-S160B |
Silicon Carbide MOSFET
|
CREE
|
| NXPSC04650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| CPMF-1200-S080B |
Silicon Carbide MOSFET
|
CREE
|
| GA50JT12-CAL |
Normally ?OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| GC2X100MPS06-227 |
Silicon Carbide Schottky Diode
|
GeneSiC Semiconductor, ...
|
| SIDC05D60SIC3 |
Silicon Carbide Schottky Diode
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| C4D02120A |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
| C3D10060A |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
