| PART |
Description |
Maker |
| 0500DP44A1215 |
1200 /1200 MHz Diplexer (BPF/BRF)
|
Johanson Technology Inc.
|
| APT50GT120B2RDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX™ [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| APT15GN120BDQ1 APT15GN120BDQ1G |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: TO-247 [B]; BV(CES) (V): 1200; IC (A): 22; 45 A, 1200 V, N-CHANNEL IGBT, TO-247AD
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
Advanced Power Technology
|
| APT150GN120JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; IC (A): 99; 215 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| STTH312B -STTH312B |
Ultrafast recovery - 1200 V diode
3 A, 1200 V, SILICON, RECTIFIER DIODE
|
STMICROELECTRONICS
|
| FF800R12KE3 |
Technische Information / technical information
1200 A, 1200 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
eupec GmbH
|
| 1214-55 |
55 W, 28 V, 1200-1400 MHz common base transistor
55 Watts - 28 Volts, Pulsed Radar 1200 - 1400 MHz
BJT
|
GHZTECH[GHz Technology]
|
| X37120B1N1 |
Single Phase Bridge; Package: SEE_FACTORY; IO/ Leg (A): 80; VR / Leg (V): 1200; IFSM / Leg (A): 1500; 1200 V, SILICON, BRIDGE RECTIFIER DIODE
|
Microsemi, Corp.
|
| AD9735BBCRL AD9735BBCZ AD9735BBCZRL AD9735-EB AD97 |
12-Bit, 1200 MSPS D/A Converter; Package: CSPBGA (12x12x1.4mm); No of Pins: 160; Temperature Range: Industrial SERIAL INPUT LOADING, 12-BIT DAC, BGA160
10-/12-/14-Bit, 1200 MSPS DACS
|
Analog Devices, Inc.
|
| APT60DQ120B APT60DQ120BG APT60DQ120S APT60DQ120SG |
Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 60; VR (V): 1200; trr (nsec): 30; VF (V): 2.8; Qrr (nC): 2800; 60 A, 1200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
Advanced Power Technology
|
