| PART |
Description |
Maker |
| D6W-VZKG-QS3-1 |
Extreme Power DomiLED
|
DOMINANT Semiconductors
|
| BL-PWT-UJS-C10 BL-PWT-SJS-C20 BL-PWT-SJS-C10 BL-PW |
SINGLE COLOR LED, CYAN, 2.4 mm
Power DOMILED InGan High brightness surface mount LED.
|
AMERICAN BRIGHT OPTOELECTRONICS CORP
BRIGHT LED ELECTRONICS CORP
|
| BL-PDB-SRS-C10 BL-PDB-CRS-C10 BL-PDC-CRS-C10 BL-PD |
Z-BEND DOMILED InGaN High brightness surface mount LED. 直弯曲DOMILED的InGaN高亮度表面贴装发光二极管
Z-BEND DOMILED InGaN High brightness surface mount LED. 直弯DOMILED的InGaN高亮度表面贴装发光二极管
|
Bright LED Electronics Corp.
Bright LED Electronics, Corp.
|
| BL-PDH-GRS-C20 BL-PDH-GRS-C10 |
AlGaAs DOMILED Surface mount LED.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-PMRTB-UJB BL-PMRTB-SJB |
Multi DOMILED High brightness tri-color surface mount LED.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-PMYG-GJS BL-PMRY-GJS BL-PMRG-GJS |
DUAL COLOR LED, YELLOW/GREEN 3.20 X 2.80 MM, 1.90 MM HEIGHT, SURFACE MOUNT PACKAGE-4
Bi-Color DOMILED GaP High brightness bi-color surface mount LED.
|
American Bright Optoelectronics, Corp.
BRIGHT LED ELECTRONICS CORP
|
| BL-PMYT-CJS BL-PMYB-CJS BL-PMSY-CJS BL-PMST-CJS BL |
DUAL COLOR LED, YELLOW/BLUE 2.80 X 3.20 MM, 1.90 MM HEIGHT, SURFACE MOUNT PACKAGE-4
DUAL COLOR LED, YELLOW/TRUE GREEN 2.80 X 3.20 MM, 1.90 MM HEIGHT, SURFACE MOUNT PACKAGE-4
Bi-Color DOMILED High brightness bi-color surface mount LED.
|
American Bright Optoelectronics, Corp.
BRIGHT LED ELECTRONICS CORP
|
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL
SIPMOS垄莽 Power-Transistor
SIPMOS庐 Power-Transistor
SIPMOS? Power-Transistor
SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| TA8263BH TA8263 |
Max Power 43 W BTL 4 ch Audio Power IC
Max Power 43 W BTL ??4 ch Audio Power IC
Max Power 43 W BTL 】 4 ch Audio Power IC
IC,AUDIO AMPLIFIER,QUAD,BIPOLAR,ZIP,25PIN,PLASTIC
Max Power 43 W BTL × 4 ch Audio Power IC
Max Power 43 W BTL x 4 ch Audio Power IC
|
Toshiba Semiconductor
|
| TDA4863-2 TDA4863-2G Q67040-S4620 Q67040-S4621 |
Power Control ICs - PFC-IC for high Output Power in SMD-Package
Power Factor Controller IC for High Power Factor and Low THD
|
INFINEON[Infineon Technologies AG]
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
