| PART |
Description |
Maker |
| OC70 OC75 OC66 2N217 OC74 OC65 OC73 OC76 OC77 OC78 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 10MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 150MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 300MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 300MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 250MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-5 TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-5 68HC11/Bidirectional-Compatible µP Reset Circuit TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 18V的五(巴西)总裁| 500mA的一(c)|
|
APEM SA
|
| 2N1025 2N2176 2N1475 2N1027 2N1474 2N329B 2N1654 2 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 50MA I(C) | TO-5 5-Pin, Multiple-Input, Programmable Reset ICs TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 50MA I(C) | TO-5 68HC11/Bidirectional-Compatible µP Reset Circuit TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 50MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 100MA I(C) | TO-5 Silicon Transistors
|
Semitronics
|
| AP1034 AP1038 AP1023 AP1145 AP1037 AP1022 AP1065 A |
TRANSISTOR | BJT | PNP | 275V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-210AC TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-66 TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-210AC TRANSISTOR | BJT | PNP | 170V V(BR)CEO | 10A I(C) | TO-5 TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 10A I(C) | TO-33 TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|进步党| 120伏特五(巴西)总裁| 10A条一(c)|
|
SCHURTER AG
|
| BC461-5 SEMELABLTD-BC461-5E1 |
2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-5 Bipolar PNP Device in a Hermetically sealed TO39 Metal Package
|
SEMELAB LTD Seme LAB
|
| 2SA965 2SA965O 2SA965Y |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AND POWER AMPLIFIER APPLICATIONS TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | TO-92VAR 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
TOSHIBA[Toshiba Semiconductor]
|
| PBSS5250T PBSS5250T215 |
50 V; 2 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 50 V, 2 A PNP low VCEsat (BISS) transistor 50 V 2 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
| PBSS3540M PBSS3540M315 |
40 V, 0.5 A PNP low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR 40 V. 0.5 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V. Philips
|
| PBSS301PD PBSS301PD115 |
20 V, 4 A PNP low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 4000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR 20 V, 4 A PNP low VCEsat (BISS) transistor 4000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五(巴西)总裁|甲一(c)| TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 1A条一(c)|采用SOT - 89 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五(巴西)总裁| 400mA的一(c)| TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC Fujitsu, Ltd. Bourns, Inc. Amphenol, Corp.
|
| 2SA1350 2SA1350D |
Silicon PNP Transistor Silicon PNP Epitaxial TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | SPAK
|
HITACHI[Hitachi Semiconductor]
|