| PART |
Description |
Maker |
| SCS110AG SCS120AG |
SiC Schottky Barrier Diodes
|
Rohm
|
| LSIC2SD120C10 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
Littelfuse
|
| IDW10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH06G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH04G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
| 10-FZ06NBA110FP-M306L28 |
high speed IGBT with C6 MOSFET and SiC buck diodes
|
Vincotech
|
| BZX85C47GP BZX85C15GP BZX85C75GP BZX85C7V5GP BZX85 |
150 V, 2 mA, 1.3 W glass passivated zener diode
SMALL SIGNAL SCHOTTKY DIODES 齐纳二极
5.0V PC real-time clock 齐纳二极
Low capacitance, low series inductance and resistance Schottky diodes
Low capacitance small signal Schottky diodes
Small signal Schotky diodes
|
Fagor
Electronics Industry Public Company Limited
Fairchild Semiconductor, Corp.
|
| SML10SIC03NJC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| IDH08S120 |
thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
| SCS106AG1104 |
SiC Schottky Barrier Diode
|
Rohm
|
