| PART |
Description |
Maker |
| AFT05MP075GNR1 AFT05MP075NR1 |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs
|
NXP Semiconductors
|
| AFT09MS007N AFT09MS007NT1 |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| MRFE6VP5600HR6 MRFE6VP5600HSR6 |
RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode
|
Freescale Semiconductor, Inc
|
| STL92N10F7AG |
High avalanche ruggedness
|
STMicroelectronics
|
| STB80N4F6AG |
High avalanche ruggedness
|
STMicroelectronics
|
| IPW60R070P6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| IPD60R1K0CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STW65N65DM2AG |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| IPL60R210P6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STH315N10F7-2 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPL65R1K0C6S |
Very high commutation ruggedness
|
Infineon Technologies A...
|
