| PART |
Description |
Maker |
| UT--141C--25 CRCW120610R0JNEA MCGPR63V477M13X26--R |
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
| STH360N4F6-2 |
High avalanche ruggedness
N-channel 40 V, 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| IPW60R041P6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STL92N10F7AG |
High avalanche ruggedness
|
STMicroelectronics
|
| STW48N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| IPW60R070P6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STP130N6F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| STW70N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STP100N6F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPD60R460CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STD85N10F7AG |
High avalanche ruggedness
|
STMicroelectronics
|
