| PART |
Description |
Maker |
| HCP60R150T |
Extremely low switching loss
|
SemiHow Co.,Ltd.
|
| FMH25N50ES |
This new power MOSFET realized the low switching loss and low switching noise
|
Fuji Electric
|
| BAR65-02L BAR65-07 BAR65 BAR65-02V BAR65-03W |
PIN Diodes - Low Loss, Low Capacitance Switch in ultra small SC79 package
PIN Diodes - Low loss, low capacitance RF switching PIN diode
Silicon PIN Diode
|
INFINEON[Infineon Technologies AG]
|
| BYC8-600 |
Hyperfast rectifier diode, low switching loss
|
NXP Semiconductors
|
| BYC10-600CT-15 |
Dual rectifier diode ultrafast, low switching loss
|
NXP Semiconductors
|
| PMV31XN PMV31XN-01 |
uTrenchMOS (tm) extremely low level FET
UTrenchMOS extremely low level FET
From old datasheet system
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BAR65-07 BAR6507 |
Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-Diode Band switch for TV-tuners)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| PMF290XN |
N-channel uTrenchmos (tm) extremely low level FET
N-channel mTrenchMOS extremely low level FET
N-channel mTrenchMOS extremely low level FET
|
http://
PHILIPS[Philips Semiconductors]
|
| BYC10-600 |
Rectifier diode ultrafast, low switching loss
Rectifier diode ultrafast/ low switching loss
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BYC10-600CT BYC10-600CT_3 BYC10-600CT127 |
Rectifier diode ultrafast, low switching loss; Package: week 1, 2005
From old datasheet system
|
NXP SEMICONDUCTORS
Philips
|
| Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
