| PART |
Description |
Maker |
| UPD44321362GF-A50 UPD44321182 UPD44321182GF-A50 |
32M-BIT ZEROSB SRAM PIPELINED OPERATIO
|
NEC[NEC]
|
| SD150N20MBC SD150N20MBV SD150N20MC SD150N20MSC SD1 |
STANDARD RECOVERY DIODES 标准恢复二极
2500V 150A Std. Recovery Diode in a DO-205AC (DO-30)package
1600V 150A Std. Recovery Diode in a DO-205AC (DO-30)package
800V 150A Std. Recovery Diode in a DO-205AC (DO-30)package
400V 150A Std. Recovery Diode in a DO-205AC (DO-30)package
1200V 150A Std. Recovery Diode in a DO-205AC (DO-30)package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| 614-97-391-18-101-144 517-91-391-18-101-111 517-91 |
Pin grid array sockets and carrier with interstitial contact rows Solder tail 插针网格阵列插座并与承运人间质接触焊尾行
RECTIFIER SCHOTTKY SINGLE 7.5A 50V 150A-ifsm 0.65V-vf 0.5mA-ir TO220AC 50/TUBE 插针网格阵列插座并与承运人间质接触焊尾行
RECTIFIER SCHOTTKY DUAL COMMON-CATHODE 15A 40V 150A-Ifsm 0.7Vf 0.1A-IR D2PAK 800/REEL-13
RECTIFIER SCHOTTKY DUAL COMMON-CATHODE 15A 45V 150A-Ifsm 0.7Vf 0.1A-IR D2PAK 800/REEL-13
RECTIFIER SCHOTTKY SINGLE 7.5A 60V 150A-ifsm 0.65V-vf 0.5mA-ir TO220AC 50/TUBE
RECTIFIER SCHOTTKY SINGLE 7.5A 45V 150A-ifsm 0.84V-vf 0.1mA-ir TO220AC 50/TUBE
RECTIFIER SCHOTTKY DUAL COMMON-CATHODE 15A 30V 150A-Ifsm 0.7Vf 0.1A-IR D2PAK 800/REEL-13
RECTIFIER SCHOTTKY DUAL COMMON-CATHODE 15A 35V 150A-Ifsm 0.7Vf 0.1A-IR D2PAK 800/REEL-13
|
PRECI-DIP SA
PREDIP[Precid-Dip Durtal SA]
|
| IC62VV12816LL IC62VV12816L IC62VV12816L-70B IC62VV |
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM
70ns; 1.8V; 128K x 16 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| MC145109 MC145107 MC145112P MC145112 MC145109P MC1 |
CMOS LSI (LOW-POWER COMPLEMENTARY MOS) PLL FREQUENCY SYNTHESIZERS
CMOS MSI / Low Power Complementary MOS
|
MOTOROLA[Motorola, Inc]
|
| IC62C1024L IC62C1024L-35Q IC62C1024L-35QI IC62C102 |
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
From old datasheet system
55ns; 5V; 128K x 8 low power CMOS static RAM
35ns; 5V; 128K x 8 low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| STC62WV1024 STC62WV1024DC STC62WV1024DC-55 STC62WV |
VERY LOW POWER VOLTAGE CMOS SRAM
DIODE,ZENER 12. V 1. W SP-55 *1N4742A 非常低的电压CMOS的SRAM
VERY LOW POWER VOLTAGE CMOS SRAM 非常低的电压CMOSSRAM
VERY LOW POWER VOLTAGE CMOS SRAM 非常低的电压CMOS的SRAM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| IC62C1024AL IC62C1024ALNEW IC62C1024AL-35QI IC62C1 |
55ns; 5V; 128K x 8 low power CMOS static RAM
128K X 8 LOW POWER CMOS SRAM
From old datasheet system
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
