| PART |
Description |
Maker |
| BGA231L7 |
Silicon Germanium GPS Low Noise Amplifier
|
Infineon Technologies AG
|
| BGA915N7 |
Silicon Germanium GPS Low Noise Amplifier
|
Infineon Technologies AG
Infineon Technologies A...
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| BGU7003 |
Wideband Silicon Germanium Low-noise Amplifier MMIC
|
Philips Semiconductors
|
| SGL-0363Z |
5-2000 MHZ LOW NOISE AMPLIFIER SILICON GERMANIUM
|
List of Unclassifed Manufacturers
Sirenza Microdevices, Inc
|
| BGU7003 |
Wideband silicon germanium low-noise amplifier MMIC
|
NXP Semiconductors
|
| BFP740 |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package
NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| BGA715N7 |
16/32-Bit Single-Chip Microcontroller
Silicon Germanium Low Noise Amplifier
|
Infineon Technologies AG
Infineon Technologies A...
|
| 1N128 |
Germanium Diodes / Germanium Rectifiers
|
ETC
|
| BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package
C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Infineon Technologies AG
|
