| PART |
Description |
Maker |
| AFT05MS003N |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| UT--141C--25 CRCW120610R0JNEA MCGPR63V477M13X26--R |
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
| MRFE6VP61K25GSR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 M |
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| STH140N8F7-2 |
High avalanche ruggedness
N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| STL90N10F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPP50R380CE-15 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STP80N6F6 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPW60R070P6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STP100N8F6 |
High avalanche ruggedness
|
STMicroelectronics
|
| STH170N8F7-2 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPL60R210P6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
