| PART |
Description |
Maker |
| 2200173 |
Additional labeling of PCB with Phoenix Contact PMB module marker carrier (drill hole diameter 4 mm)
|
PHOENIX CONTACT
|
| XL4550GRN-XXXX-G4-H-0001 XL4550ROY-XXXX-RB5-04-001 |
550XLamp LED的分箱和标签
XLamp4550 LEDs Binning and Labeling 550的XLamp LED的分箱和标签
XLamp??4550 LEDs Binning and Labeling
|
Cree, Inc.
|
| 2N6796LCC4 |
N-Channel Power MOSFET（Vdss00VId(cont).4A，Rds(on).18ΩN沟道功率型MOS场效应管（Vdss00VId(cont).4A，Rds(on).18Ω
|
SEME-LAB[Seme LAB]
|
| XR7090GR-L1-0001 XR7090WT-L1-2001 XR7090WT-G1-0001 |
XLamp? XR LED Binning and Labeling
|
Cree, Inc
http://
|
| XL4550BLU-XXXX-B3-C-0001 XL4550GRN-XXXX-G3-G-0001 |
XLamp 4550 LEDs Binning and Labeling
XLamp? 4550 LEDs Binning and Labeling
|
Cree, Inc.
|
| 32LD380TA |
LCD Display SERVICE MANUAL
TV SERVICE MANUAL
|
Hitachi
|
| IRFN340SMD |
N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| IRF240SMD |
N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
|
SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
|
| S05K75 S20S275B S05K115 S05K130 S05K140 S05K175 S0 |
ELECTRICAL SPECIFICATIONS, CONT. DISC TYPES
|
List of Unclassifed Man...
N.A.
ETC[ETC]
List of Unclassifed Manufacturers
|
| SML80H12 SML100H11 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| ES8380 |
Phoenix DCD Processor
|
ESS
|
