| PART |
Description |
Maker |
| BFY181 |
From old datasheet system
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
|
Siemens Semiconductor Group
|
| BFY280 BFY280H |
From old datasheet system
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
|
Infineon
Siemens Semiconductor Group
|
| BFY180 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
|
Siemens Semiconductor G...
|
| BFY180 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
From old datasheet system
|
SIEMENS AG
Siemens Semiconductor Group
|
| BFP540FESD |
NPN Silicon RF Transisto NPN硅射频Transisto
|
INFINEON[Infineon Technologies AG]
|
| BFY183H BFY183 BFY183ES BFY183P BFY183S |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFY182S BFY182 BFY182ES BFY182H BFY182P |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFY40511 |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFY180H BFY180P BFY180 BFY180ES BFY180S |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| CC5401 |
PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTO
|
Continental Device India Limited
|
| BXY4211 |
HiRel Silicon PIN Diode
|
Infineon Technologies AG
|
| 2SD2655 2SD655 |
Silicon NPN Transistor
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
|
Hitachi Semiconductor
TOSHIBA[Toshiba Semiconductor]
Rohm
|
