| PART |
Description |
Maker |
| VSSAF5N50 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| Q67040S4721 Q67040S4723 Q67040S4725 IGW50N60T IGB5 |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| V10WL45-M3 V10WL45-M3I |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| VFT3080S-M3-4W |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V10PM12-M3 |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| TSSA3U45 |
Trench MOS Barrier Schottky Rectifier
|
Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Co...
|
| VFT1045BP |
Trench MOS Barrier Schottky Rectifier
|
Vishay
|
| V10WM100-M3I |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| VT1045CBP-M3-4W VT1045CBP12 |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| VFT1080S-M3-4W |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
