| PART |
Description |
Maker |
| IXUC100N055 |
Electrically Isolated Back Surface
|
IXYS Corporation
|
| IXEL40N400 |
Very High Voltage IGBT ( Electrically Isolated Tab)
|
IXYS Corporation
|
| IXSR40N60BD1 |
IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)
|
IXYS[IXYS Corporation]
|
| 99161 60N60B2 60N60B2D1 IXGR60N60B2 IXGR60N60B2D1 |
B2-Class High Speed IGBTs (Electrically Isolated Back Surface)
|
IXYS Corporation
|
| IXGC16N60B2D1 |
28 A, 600 V, N-CHANNEL IGBT PLASTIC, ISOPLUS220, 3 PIN
Electrically Isolated Back Surface
|
IXYS, Corp.
IXYS Corporation
|
| IXGR32N60C |
HiPerFASTTM IGBT Lightspeed Series ISOPLUS247TM package(Electrically Isolated Back Side)
|
IXYS Corporation
|
| IRFK6J150 IRFK6H150 IRFK6H350 IRFK6J350 IRFK6JC50 |
ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION
ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION 隔震基电力六角巴基斯坦大会平行芯片配
Lsolated Base Power HEX-pak Assembly Half Bridge Configuration
100V SINGLE HEXFET Power MOSFET in a TO-240AA package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFK3D450 IRFK3D150 IRFK3D350 IRFK3DC50 IRFK3F150 |
From old datasheet system
Isolated Base Power HEX-pak Assembly - Half Bridge Configuration
|
IRF[International Rectifier]
|
| IRFK2DE50 |
(IRFK2DE50 / IRFK2FE50) ISOLATED BASE POWER HEX-PAK ASSEMBLY - HALF BRIDGE CONFIGURATION
|
International Rectifier
|
| AM27S21APC |
1KBIT(256X4)PROM 30NS 16BR PLA 256 X 4 OTPROM, 30 ns, PDIP16
|
Advanced Micro Devices, Inc.
|
| IXFR24N50 IXFR26N50 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HIPERFET POWER MOSFETS ISOPLUS247 (ELECTRICALLY ISOLATED BACK SURFACE)
|
IXYS Corporation
|
