| PART |
Description |
Maker |
| HM5112805LTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Renesas Technology / Hitachi Semiconductor
|
| M466F0804DT1-L |
8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W971GG6JB W971GG6JB25I |
8M ?8 BANKS ?16 BIT DDR2 SDRAM
DLL aligns DQ and DQS transitions with clock, Auto Refresh and Self Refresh modes, Write Data Mask
|
Winbond
|
| HMD4M36M9G HMD4M36M9G-5 HMD4M36M9G-6 HMD4M36M9AG-5 |
16Mbyte(4Mx36) Fast Page with Parity Mode, 2K/4K Refresh
|
Hanbit Electronics Co.,...
HANBIT[Hanbit Electronics Co.,Ltd]
|
| MT4C4007J |
1 MEG x 4 DRAM 5V, EDO PAGE MODE, OPTIONAL SELF REFRESH
|
Micron Technology
|
| V53C518165A V53C518165A50 V53C518165A60 |
1M x 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
|
Mosel Vitelic Corp
|
| AS4LC1M168 AS4LC1M16883C AS4LC1M16 |
1 MEG x 16 DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH
|
ASI
ETC[ETC]
AUSTIN[Austin Semiconductor]
|
| V53C16256SH V53C16256 |
256K X 16 FAST PAGE MODE CMOS DYNAMIC RAM WITH SELF REFRESH
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| HMD2M32M4EAG-5 HMD2M32M4EAG-6 HMD2M32M4EAG-7 HMD2M |
8Mbyte(2Mx32) EDO Mode, 1K Refresh 72Pin SIMM, 5V Design
|
Hanbit Electronics Co.,Ltd
|
| HMD4M32M2G-5 HMD4M32M2G-6 HMD4M32M2G |
16Mbyte(4Mx32) 72-pin SIMM Fast Page Mode, 4K Refresh, 5V
|
Hanbit Electronics Co.,Ltd
|
| K4F640812D K4F660812D K4F640812D-JCL |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HMD4M1Z1 |
4Mbit(4Mx1bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design
|
Hanbit Electronics Co.,Ltd.
|
