| PART |
Description |
Maker |
| IKP08N65H5 PG-TO220-3 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| IKW40N65F5 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies A...
|
| IKP20N65F5 |
high power thyristor diode
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| IGZ75N65H5 |
650V IGBT high speed series fifth generation
|
Infineon Technologies A...
|
| IKW75N65EH5 IKW75N65EH5-15 |
650V DuoPack IGBT and full-rated diode High speed series fifth generation
|
Infineon Technologies A...
|
| MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| Q67078-A4402-A2 BUP203 BUP203SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) 21 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 10-FY074PA050SM-M582F38 |
650V IGBT H5 and 650V Stealth Si diode
|
Vincotech
|
| RJH60F7ADPK RJH60F7ADPK-00-T0 |
90 A, 600 V, N-CHANNEL IGBT
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| IXYH30N120C3 IXYP30N120C3 |
High-Speed IGBT for 20-50 kHz Switching
|
IXYS Corporation
|
| IXYP20N120C3 IXYH20N120C3 IXYA20N120C3HV |
High-Speed IGBT for 20-50 kHz Switching
|
IXYS Corporation
|
