| PART |
Description |
Maker |
| HS0-6254RH-Q HS1-6254RH HS-6254RH 5962F9764101VXC |
Radiation Hardened Ultra High Frequency
NPN Transistor Array(抗辐射甚高频NPN晶体管阵
1500PF 50V 0805
BJT
Radiation Hardened Ultra High Frequency NPN Transistor Array 辐射加固超高频NPN晶体管阵
|
Intersil Corporation
Intersil, Corp.
|
| DPPS16D56K-F DPPS10D12K-F DPPS10D15K-F DPPS10D18K- |
High Voltage, High Frequency, Ultra High Peak Currents
|
Cornell Dubilier Electr...
http://
Cornell Dubilier Electronics
|
| 316A |
ULTRA-HIGH FREQUENCY TRANSMITTING TRIODE
|
List of Unclassifed Manufacturers
ETC
|
| HFA3101 |
Gilbert Cell Multiplier,Ultra High Frequency
|
Intersil
|
| UPA101B UPA101G |
Ultra-high-frequency NPN transistor array
|
NEC
|
| CXOX |
Ultra-Miniature Surface Mount High Frequency Crystal Oscillator
|
STATEK CORPORATION
|
| 0603CS-16NXL 0603CS-10NXL 0603CS-11NXL 0603CS-12NX |
Ultra-small size, exceptional Q and high SRFs make these inductors ideal for high frequency applications where size is at a premium
Chip Inductors ?0603CS (1608)
Ultra-small size, exceptional Q and high SRFs make these inductors ideal for high frequency applications where size is at a premium
|
Coilcraft lnc.
|
| 2450AT07A0100T |
Ultra-Miniature 2.4GHz Chip antenna 0.37mm max Thickness
High Frequency Ceramic Solutions
|
Johanson Technology Inc...
|
| FX-104 |
Frequency Translator66.5143MHz Output Locked to Input Frequency 8kHz Clock,Ultra Low Jitter PECL Output频率变换器（155.52MHz时钟输出kHz输入时钟,超低Jitter PECL输出
|
Vectron International, Inc.
|
| 15GN01MA |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 15GN01SA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
