| PART |
Description |
Maker |
| K4D26323AA-GL |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
| K4D26323RA-GC |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
| GS8170DD18GC-333IT GS8170DD18C-333I GS8170DD18C-25 |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM
300MHz 1M x 18 18MB double data rate sigmaRAM SRAM
250MHz 1M x 18 18MB double data rate sigmaRAM SRAM
1M X 18 STANDARD SRAM, 1.6 ns, PBGA209
|
GSI TECHNOLOGY
|
| DSK4D263238D K4D263238D K4D263238D-QC40 K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| W972GG6JB W972GG6JB-25 |
16M ?8 BANKS ?16 BIT DDR2 SDRAM
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| C1227 |
ECONOLINE: RSS & RSD - 1kVDC and 3KVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 85%- SMD5, SMD8, SMD10 and SMD12 case styles 30V的高压BiCMOS工艺1.2毫米双金双聚
From old datasheet system
HV BiCMOS 1.2mm 30V Double Metal - Double Poly
|
IMP[IMP, Inc]
IMP Inc
|
| UPD4482183 UPD4482363 UPD4482183GF-A50 UPD4482363G |
8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT 800万位CMOS同步快速静态存储器流水线操作双循环取消选择
|
NEC Corp.
NEC, Corp.
|
| ADD8616A8A VDD8608A8A-75BA VDD8608A8A ADD8616A8A-7 |
DOUBLE DATA RATE SDRAM
From old datasheet system
DOUBLE DATA RATE SDRAM 双倍数据速率SDRAM内存
|
A-DATA[A-Data Technology]
ADATA Technology Co., Ltd.
|
| K7P801866M |
256Kx36 & 512Kx18 Synchronous Pipelined SRAM Data Sheet
|
Samsung Electronic
|
| A65H83181 A65H83181P-5 A65H83181P-6 |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output
|
AMIC Technology
|
