| PART |
Description |
Maker |
| IXFR34N80 |
Single MOSFET Die Avalanche Rated
|
IXYS Corporation
|
| IXFN280N0708 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXFL44N60 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| Q67120-D C167CS-XC Q67120-C2200 Q67120-C2274 Q6712 |
16-Bit Single-Chip Microcontroller Bare Die Delivery
|
INFINEON[Infineon Technologies AG]
|
| K4H560438E-NC/LA2 K4H560838E-NC/LA2 K4H560438E-NC/ |
256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP（二
DIODE ZENER SINGLE 300mW 43Vz 5mA-Izt 0.02 0.05uA-Ir 33 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP（二
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP 0 to 70
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC -40 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-SOIC
256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 0936013905 |
GWconnect STD - Standard, Single Lever Surface Mount Housing, Die-cast Aluminum
|
Molex Electronics Ltd.
|
| IXFN230N1008 |
Power MOSFET Single Die MOSFET
|
IXYS Corporation
|
| HMT351U7CFR8C-H9 HMT351U7CFR8C-RD HMT351U7CFR8C-PB |
DDR3 SDRAM Unbuffered DIMMs Based on 2Gb C-Die
DDR3L SDRAM Unbuffered DIMMs Based on 4Gb M-Die
|
Hynix Semiconductor
|
| K4H560838E-GCCC K4H560438E-GCC4 K4H560438E-GCCC K4 |
DIODE ZENER SINGLE 300mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-23 3K/REEL 256Mb的电子芯片的DDR 400内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-23 3K/REEL
256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| SIDC02D60SIC2SAWN SIDC02D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 6A die sawn
Diodes - HV Chips - 600V, 6A die unsawn
|
Infineon
|
| K4H510438B-UC/LA2 K4H510838B-UC/LA2 K4H510438B-UC/ |
8-Bit, 31 kSPS ADC Serial Out, Microprocessor Peripheral/Standalone, Single Channels 8-PDIP 512MB的乙芯片DDR SDRAM内存规格
8-Bit, 31 kSPS ADC Serial Out, Microprocessor Peripheral/Standalone, Single Channels 8-SOIC
8-Bit, 22 kSPS ADC Serial Out, uProcessor Periph./Standalone, Mux option w/SE or differential, 2 Ch. 8-SOIC
8-Bit, 392 kSPS ADC Parallel Out, Microprocessor Peripheral, On-Chip Track-and-Hold, Single Channels 20-SSOP 0 to 70
512Mb B-die DDR SDRAM Specification
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
|
