| PART |
Description |
Maker |
| APT10M11JVR |
POWER MOS V 100V 144A 0.011 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10M19BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 100V 75A 0.019 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT10M19BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 100V 75A 0.019 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT10M09LVFR APT10M09B2VFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 100V 100A 0.009 Ohm
|
Advanced Power Technology, Ltd.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| RJK1051DPB-00-J5 RJK1051DPB-15 |
100V, 15A, 39m max. Silicon N Channel Power MOS FET Power Switching
100V, 15A, 39m?max Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK1052DPB-13 RJK1052DPB-00-J5 RJK1052DPB-15 |
100V, 20A, 20m max. Silicon N Channel Power MOS FET Power Switching
100V, 20A, 20m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| STD9N10L 6165 |
N - CHANNEL 100V - 0.22ohm - 9A IPAK/DPAK POWER MOS TRANSISTOR
From old datasheet system
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IRF5Y9540CM |
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 100V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| IRF5Y3710CM |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.035ohm, Id=18A*) 功率MOSFET N沟道（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.035ohm，身份证\u003d 18A
POWER MOSFET N-CHANNEL(Vdss=100V Rds(on)=0.035ohm Id=18A*)
THRU-HOLE (TO-257AA) 100V, N-CHANNEL
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFL4310 IRFL4310TR |
HEXFET? Power MOSFET
1.6 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A)
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
IRF[International Rectifier]
|
