| PART |
Description |
Maker |
| N25Q128A13BF840E N25Q128A23BF840E N25Q128A33BF840E |
16M X 8 FLASH 3V PROM, PDSO16
16M X 8 FLASH 3V PROM, PBGA24
128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
|
| W25X32VDAI W25X32VDAIZ W25X32VZPI W25X32VZPIZ W25X |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
http://
|
| W25Q16CL W25Q16CLDAIG W25Q16CLDAIP W25Q16CLSFIG W2 |
2.5V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
|
Winbond
|
| W25Q16DVSVIG W25Q16DVSVIP W25Q16DVDAIG W25Q16DVDAI |
3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
|
Winbond
|
| W25Q16DWSFIG W25Q16DWSNIG W25Q16DWSFIP W25Q16DWSNI |
1.8V 16M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
|
Winbond
|
| MX25L1602 MX25L1602MC-50 |
16M-BIT [16M x 1] CMOS SERIAL FLASH EEPROM
|
Macronix International
|
| MBM29LV160T-80 MBM29LV160T-80PBT MBM29LV160T-80PBT |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT
CMOS 16M (2M x 8/1M x 16) bit
|
Fujitsu Microelectronics
|
| K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AT25F4096 |
4 M-bit, SPI Bus Serial Flash, High-speed, SPI Mode 0 and 3
|
Atmel
|
| MBM29DL16XBD-90 MBM29DL16XTD-70 MBM29DL16XTD-90 MB |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT Dual Operation
Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation
|
Fujitsu Microelectronics
|
| BUT76 BUT76A |
Silicon NPN Power Transistors
8-bit MCU with Flash or ROM, 10-bit ADC, 5 timers, SPI, 2x LINSCI" 晶体管|晶体管|叩| 450V五（巴西）总裁| 12A条一（c）|20
8-bit MCU with Flash or ROM, 10-bit ADC, 5 timers, SPI, 2x LINSCI"
|
Vishay
Telefunken
STMicroelectronics N.V.
|
