| PART |
Description |
Maker |
| QVS212CG100JDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| RM20CA-XXS RM20C1A-XXS RM20DA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE 中功率，高频率使用的绝缘
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SC4258 2SC425810 |
FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2CL73T |
High Voltage Fast Recovery Rectifier 12 kV Vol ts
|
MCC[Micro Commercial Components]
|
| 2CL73T |
High Voltage Fast Recovery Rectifier 12 kV Vol ts
|
Micro Commercial Compon...
|
| QVS212CG180JDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| CPH6003A-TL-E CPH6003A-D |
High-frequency Medium-power Amplifier Applications
|
Sanyo Semicon Device
|
| ENA1118A |
High-Frequency Medium-Output Amplifier Applications
|
Sanyo Semicon Device
|
| HSG2004 HSG2004TB-E |
SiGe HBT High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| NE678M04-T2 NE678M04 |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR 中功率NPN硅高频晶体管
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| HSG2001 HSG2001VF |
SiGe NPN Epitaxial High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
