| PART |
Description |
Maker |
| STU10NB80 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL 800V - 0.65ohm - 10A - Max220 PowerMESHO MOSFET
|
ST Microelectronics
意法半导
|
| 10N70-Q |
N-CHANNEL POWER MOSFE
|
Unisonic Technologies
|
| FQPF6N80C FQP6N80C |
800V N-Channel Advance Q-FET C-Series
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| STP10NK60Z_FP W10NK60Z B10NK60Z B10NK60Z-1 P10NK60 |
N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STD1NB80- STD1NB80-1 6190 STD1NB80 |
N-CHANNEL 800V - 16 OHM - 1A - IPAK POWERMESH MOSFET
N-CHANNEL 800V - 16 OHM - 1A - DPAK/IPAK POWERMESH MOSFET
N - CHANNEL 800V - 16ohm - 1A - IPAK PowerMESH MOSFET
N - CHANNEL 800V - 16 - 1A - IPAK PowerMESH TM MOSFET
N-CHANNEL POWER MOSFET
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| FQI3N80 FQB3N80 FQI3N80TU |
800V N-Channel QFET
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V（D-S），Qg，快速开
N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| AP2302AGN-HF |
Advanced Power MOSFE
|
TY Semiconductor Co., Ltd
|
| STB6NA80 4233 STB6NA80-1 STB6NA80T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-262VAR
N-CHANNEL Power MOSFET
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| APT8075 APT8075BN APT8090BN |
POWER MOS V 800V 13.0A 0.75 Ohm / 800V 12.0A 0.90 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| IRFBE20 |
800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A)
Power MOSFET(Vdss=800V/ Rds(on)=6.5ohm/ Id=1.8A)
|
IRF[International Rectifier]
|
