| PART |
Description |
Maker |
| 2SK3405 |
4.5-V drive available Low on-state resistance RDS( = 9.0m MAX. (VGS = 10 V, ID = 24 A)
|
TY Semiconductor Co., Ltd
|
| 2SK3430 |
Super low on-state resistance: RDS(on)1 = 7.3 m MAX. (VGS= 10 V, ID = 40 A)
|
TY Semiconductor Co., L...
|
| 2SK3433 |
Super low on-state resistance: RDS(on)1 = 26m MAX. (VGS= 10 V, ID = 42 A)
|
TY Semiconductor Co., L...
|
| 2SK3109 |
Gate voltage rating -30 V Low on-state resistance RDS(on) = 0.4 MAX. (VGS= 10 V, ID = 5.0 A)
|
TY Semiconductor Co., Ltd
|
| NDH854P |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V
P-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SK2111 |
N-Channel MOSFET
Low on-resistance RDS(on)=0.6 MAX.VGS=4.0V,ID=0.5A High switching speed
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| SI2304DS |
30 0.117 @ VGS = 10 V 0.190 @ VGS = 4.5 V
|
TY Semiconductor Co., Ltd
|
| AP1702 AP1702AW AP1702AWL AP1702BW AP1702BWL AP170 |
4.63 V, 3-pin microprocessor reset circuit
4.38 V, 3-pin microprocessor reset circuit
3.08 V, 3-pin microprocessor reset circuit
TRANSISTOR, JFET N TO-18
RECTIFIER SBR SINGLE 2A 30V 75A-ifsm 0.45Vf 0.2mA-ir PowerDI-123 3K/REEL
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:12mA; Zero Gate Voltage Drain Current Max, Idss:30mA; Gate-Source Cutoff Voltage Max, Vgs(off):-4V; Package/Case:TO-78
3-Pin Microprocessor Reset Circuits 3引脚微处理器复位电路
JFET; Transistor Polarity:Dual N Channel; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:12mA; Zero Gate Voltage Drain Current Max, Idss:30mA; Gate-Source Cutoff Voltage Max, Vgs(off):-4V 3引脚微处理器复位电路
2.93 V, 3-pin microprocessor reset circuit
2.63 V, 3-pin microprocessor reset circuit
4.00 V, 3-pin microprocessor reset circuit
|
ANACHIP[Anachip Corp]
ETC[ETC]
复位半导
NEC, Corp.
Kingbright, Corp.
|
| 2SK2414 |
Low On-Resistance RDS(on)1 = 70 m MAX. ( VGS = 10 V, ID = 5.0 A) Low Ciss Ciss = 840 pF TYP.
|
TY Semiconductor Co., Ltd
|
| STR-BS6301 STRS6301 STR-S6301 |
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns;
SWITCHING REGULATOR HYRRTD lC
|
Sanken Electric Co.,Ltd.
|
| 24C02 ST25C02B1TR ST25C02B3TR ST25C02B5TR ST25C02B |
IC MAX 7000 CPLD 32 44-PLCC I2C串行EEPROM
SERIAL 2K (256 x 8) EEPROM 串行2K56 × 8）的EEPROM
SERIAL 2K (256 x 8) EEPROM 串行2K256 × 8）的EEPROM
Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:189; Package/Case:240-PQFP; Leaded Process Compatible:No; Number of Circuits:1728; Peak Reflow Compatible (260 C):No; Mounting Type:surface mount RoHS Compliant: No
IC MAX 7000 CPLD 32 44-TQFP
MOSFET, N, SO-8; Transistor type:MOSFET; Current, Id cont:4A; Resistance, Rds on:6.7R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| SPD08P06P SPU08P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
|
INFINEON[Infineon Technologies AG]
|
