| PART |
Description |
Maker |
| BGT24AT2 |
Silicon Germanium 24 GHz Transmitter MMIC
|
Infineon Technologies A...
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| SL1222101-A SL1222101-B |
TRANS,WALL,24VDC/400mA,F2, 2.1mm x 5.5mm,UL 50/cs 电路保护热敏电阻
TRANS,WALL,24VDC/500mA,F1 2.1mmX5.5mm,UL
TRANS,WALL,18VDC/1A,F2,2.5X5.5 ,2 PRNG AC,LIN NON-REG
|
Ametherm, Inc.
|
| BFP74009 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| BFP650F |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BFP740F |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| NESG3032M14-T3-A NESG3032M14-A NESG3032M14-T3 NESG |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell
California Eastern Labs
|
| BFU710F |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFU730F BFU730F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BGA616 |
Silicon Germanium Broadband MMIC Amplifier
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BFY640 BFY640B |
HiRel NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BFU730LX-15 BFU730LX |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
