| PART |
Description |
Maker |
| IPD60R360P7S |
600V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|
| IPL60R125P7 |
600V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|
| IPB60R099C7 |
600V CoolMOSa C7 Power Transistor
|
Infineon Technologies A...
|
| IPD60R1K5CE IPD60R1K5CE-16 |
600V CoolMOSa CE Power Transistor
|
Infineon Technologies A...
|
| IPD60R600P7 |
600V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|
| IPP60R080P7 |
600V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|
| IPP60R060P7 |
600V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|
| IPA60R060P7 |
600V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|
| IPA60R180P7 |
600V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|
| IPU60R2K1CE |
600V CoolMOSa CE Power Transistor
|
Infineon Technologies A...
|
| IMZ2A |
COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS
|
Pan Jit International Inc.
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
