| PART |
Description |
Maker |
| C398T C398PA C398S C398N C398PB C397 |
HIGH SPEED Silicon Controlled Rectifier
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| NTE5351 |
Silicon Controlled Rectifier (SCR) for High Speed Switching
|
NTE[NTE Electronics]
|
| TPC8105-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications
|
TOSHIBA
|
| TPC8009-H |
Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII)
|
Toshiba Semiconductor
Toshiba Corporation
|
| 2SK3748 |
N CHANNEL MOS SILICON TRANSISTOR
High-Voltage High-Speed Switching Applications
High-Voltage, High-Speed Switching Applications
From old datasheet system
|
SANYO[Sanyo Semicon Device]
|
| KSC2335 KSC2335OTU KSC2335R KSC2335RTU KSC2335Y KS |
NPN Epitaxial Silicon Transistor
High Speed, High Voltage Switching
High Speed/ High Voltage Switching
|
FAIRCHILD[Fairchild Semiconductor]
|
| TYN058 |
SILICON CONTROLLED RECTIFIER,50V V(DRM)
Silicon controlled rectifiers
From old datasheet system
|
ST Microelectronics
|
| 2SK2349 1034 |
N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications
From old datasheet system
High-Voltage/ High-Speed Switching Applications
|
Sanyo Semicon Device
|
| MC981 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V.
DIODE FOR HIGH SPEED SWICHING APPLICATION SILICON EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| FJP5027 FJP5027TU FJP5027R FJP5027RTU |
Wide SOA
High Speed Switching
High Voltage and High Reliability
NPN Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| KSE5020 KSE5020AS KSE5020S |
High Voltage, High Quality High Speed Switching : tF=0.1μs
Feature
NPN Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| BSP280 Q67000-S279 |
IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail current)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
