| PART |
Description |
Maker |
| 0707057 |
Header, nominal current: 12 A, rated voltage: 320 V, pitch: 5.08 mm, no. of positions: 8, mounting: Direct mounting - DFK-MSTB 2,5/ 8-G-5,08
|
Phoenix Contact
|
| CPR |
Commercial Power, Radial Terminals, Fireproof Inorganic Construction, Direct Mounting on Printed Circuitboard, Circuitboard Lock-in Mounting Tabs, Fusible Styles Available
|
Vishay
|
| BPI-3C1-05 |
Non-contact switching For direct PC board or dual-in-line socket mounting.
|
Bright LED Electronics Corp.
|
| BPI-3C1-03 |
Non-contact switching For direct pc board or dual-in-line socket mounting. 非接触直接PC板或双列直插式插座开关安装
|
Bright LED Electronics, Corp.
Bright LED Electronics Corp.
|
| 0245900000 0274420000 0274020000 0274620000 024352 |
Single- and multi-pole terminal strip, 2.5 mm Screw connection, KrG, Medium yellow, Direct mounting
|
Weidmuller
|
| HYMR16416 HYMR16418H-840 |
32Mx16|2.5V|40|-|Direct RDRAM - 64MB RIMM
64M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA184 RIMM-184
|
Hynix Semiconductor, Inc.
|
| M67743H 67743H |
77-88MHz /12.5V /7W / FM PORTABLE RADIO
77-88MHZ, 12.5V, 7W, FM PORTABLE RADIO
77-88MHz12.5V7W FM PORTABLE RADIO
From old datasheet system
77-88MHz,12.5V,7W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AN7333S |
4-Element Graphic Equalizer IC for Radio/Radio Cassette Recorder
|
Panasonic Corporation
|
| CY2212ZC-2 CY2212ZC-2T CY2212 CY2212ZXC-2T |
Direct RambusT 82; Clock Generator (Lite)& gt;< p> Features
Direct Rambus⑩ Clock Generator (Lite)
Direct Rambus Clock Generator (Lite)
|
Cypress Semiconductor
|
| ATR4262M1 ATR4262M1-PLQW |
Broadcast Radio Front-end IC for AM/FM/DRM/HD Radio
|
ATMEL Corporation
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
