| PART |
Description |
Maker |
| IXFN180N20 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电0mΩ的N沟道增强型HiPerFET功率MOSFET)
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXFH80N10Q IXFT80N10Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?5m惟??娌??澧?己??iPerFET???MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Q-Class
|
IXYS Corporation
|
| IXFH50N20 IXFH10N65 IXFH10N60 IXFH11N100 IXFH11N60 |
HIPERFET Power MOSFTETs 42 A, 200 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HIPERFET Power MOSFTETs HIPERFET电力MOSFTETs
RES, FILM, 1.33K, 1%, .100W, 100PPM, 0805
|
IXYS, Corp.
http://
IXYS[IXYS Corporation]
|
| IXFH9N80 IXFH8N80 |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
| IXFT88N30P IXFK88N30P IXFH88N30P |
Polar HiPerFET Power MOSFET
88 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Polar HiPerFET Power MOSFET
|
IXYS Corporation
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| IRFD110 |
Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.54ohm，身份证\u003d 1.0安培
Power MOSFET(Vdss=100V/ Rds(on)=0.54ohm/ Id=1.0A)
100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF3710 IRF3710PBF |
Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 23mohm，身份证\u003d 57A条）
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFD9110 |
-100V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-0.70A)
Power MOSFET(Vdss=-100V Rds(on)=1.2ohm Id=-0.70A)
|
IRF[International Rectifier]
|
| IRF5NJ540 |
Avalanche Energy Ratings
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*)
SURFACE MOUNT (SMD-0.5)100V, N-CHANNEL
100V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
IRF[International Rectifier]
|
| IRFS59N10D IRFSL59N10D IRFB59N10D IRFB59N10 IRFS59 |
Power MOSFET(Vdss=100V/ Rds(on)max=0.025ohm/ Id=59A)
Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A)
HEXFET? Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
|
IRF[International Rectifier]
|
