| PART |
Description |
Maker |
| RURG50120 FN3740 |
50A, 1200V Ultrafast Diode(50A, 1200V 瓒?揩??????)
50A, 1200V Ultrafast Diode(50A, 1200V 超快速二极管) 50 A, 1200 V, SILICON, RECTIFIER DIODE
50A 1200V Ultrafast Diode
From old datasheet system
|
HARRIS SEMICONDUCTOR
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRGP8B120KD-E |
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
|
International Rectifier
|
| GA200TD120U |
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package
|
International Rectifier
|
| IRGPS40B12 IRGPS40B120U |
1200V UltraFast 8-25 kHz Single IGBT in a TO-274AA package
INSULATED GATE BIPOLAR TRANSISTOR 绝缘栅双极晶体管
|
IR
http://
International Rectifier, Corp.
|
| RURG30120 FN3399 |
30A, 1200V Ultrafast Diode(30A, 1200V 超快速二极管) 30 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247
30A/ 1200V Ultrafast Diode
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| RURP4120CC |
4A, 1200V Ultrafast Dual Diode(4A, 1200V 超快双二极管)
|
INTERSIL[Intersil Corporation]
|
| IRG7PH35UD-EP |
1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode
|
International Rectifier
|
| RURD6120S RURD6120 FN3962 |
6A, 1200V Ultrafast Diodes
From old datasheet system
6A/ 1200V Ultrafast Diodes
|
INTERSIL[Intersil Corporation]
|
| IRG4IBC30UD |
600V UltraFast 8-60 kHz Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
