| PART |
Description |
Maker |
| APT10SCD65KCT |
SiC Schottky Diodes
|
Microsemi
|
| APT30SCD65B |
SiC Schottky Diodes
|
Microsemi
|
| SCS108AG |
SiC Schottky Barrier Diodes
|
Rohm
|
| LSIC2SD120A10 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
Littelfuse
|
| IDW12G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH08G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH04G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| AN4242 |
New generation of 650 V SiC diodes
|
STMicroelectronics
|
| SML10SIC03NC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| SCS215AG |
SiC Schottky Barrier Diode
|
Rohm
|
