| PART |
Description |
Maker |
| JANSM2N3439 JANSM2N3439L |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| 2N7370E3 |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| 2N4234E3 2N4236E3 |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| 2N6649E3 2N6648E3 |
BJT( BiPolar Junction Transistor) Darlington Transistors
|
Microsemi
|
| 2N2905ALE3 JANSM2N2904AL |
PNP Transistor BJT( BiPolar Junction Transistor)
|
Microsemi
|
| S13003A-D |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
| PO27 |
Bipolar PNP Device in a Hermetically sealed TO39 BJT
|
Seme LAB
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五(巴西)总裁| 7.5AI(丙
|
NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
|
| MMBT2132 MMBT2132T1-D |
General Purpose Transistors NPN Bipolar Junction Transistor (Complementary PNP Device: MMBT2131T1/T3)
|
ON Semiconductor
|