| PART |
Description |
Maker |
| JANSM2N3439 JANSM2N3439L |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| 2N7370E3 |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| JANSM2N3057A |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| JANSM2N2904 JANSM2N2905AL 2N2904E3 JANSR2N2904 JAN |
BJT( BiPolar Junction Transistor)
PNP Transistor
|
Microsemi
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| MMBT2132T306 MMBT2132T3G MMBT2132T3 |
General Purpose Transistors NPN Bipolar Junction Transistor
|
ONSEMI[ON Semiconductor]
|
| 2SB1184 2SB1243 2SB1243R 2SB1243Q 2SB1184P |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-252AA 晶体管|晶体管|进步党| 50V五（巴西）总裁| 3A条一（c）|52AA
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | SIP
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
HIROSE ELECTRIC Co., Ltd.
ROHM
|
| ZXTC6717MC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes
|
| FMMTL717 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes
|
