| PART |
Description |
Maker |
| MTE8080F |
Infrared Emitter
5mm Water Clear Truncated IR Emitter
|
Marktech Optoelectronics
MARKTECH[Marktech Corporate]
|
| TD62551 TD62551S TD62553S E005673 TD62555S TD62554 |
4CH SINGLE DRIVER : COMMEN EMITTER
From old datasheet system
4CH SINGLE DRIVER : COMMON EMITTER
4CH SINGLE DIRVER : COMMON EMITTER 4路单DIRVER：共发射
|
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
| LD271LH LD271 LD271H LD271L |
INFRARD EMITTER
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| 2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| OL3450L-A-SFMUJ-S2 OL4451L-B-AFMUJ-S1 OL5451L-B-AF |
FIBER OPTIC LASER DIODE MODULE EMITTER, 1300-1320nm, PANEL MOUNT, THROUGH HOLE MOUNT, MU-J CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1480-1500nm, PANEL MOUNT, THROUGH HOLE MOUNT, MU-J CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1510-1530nm, PANEL MOUNT, THROUGH HOLE MOUNT, MU-J CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1620-1640nm, PANEL MOUNT, THROUGH HOLE MOUNT, MU-J CONNECTOR
|
LAPIS SEMICONDUCTOR CO LTD
|
| STC03DE170HV07 STC03DE170HV |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| STC04IE170HV |
Emitter switched bipolar transistor ESBT? 1700V - 4A - 0.17 W
Emitter switched bipolar transistor ESBT㈢ 1700V - 4A - 0.17 W
|
STMicroelectronics
|
| TLN20107 TLN201F TLN201 |
Infrared LED GaA?As Infrared Emitter
Infrared LED GaA??s Infrared Emitter
Infrared LED GaAГAs Infrared Emitter
|
Toshiba Semiconductor
|
| C-13-001A-P-SFCHI/APC-O C-13-001A-P-SFCHI/APC-GR C |
FIBER OPTIC LASER DIODE MODULE EMITTER, 1290-1330nm, THROUGH HOLE MOUNT, FC/APC CONNECTOR HEREMATICAL SEALED PACKAGE-4
FIBER OPTIC LASER DIODE MODULE EMITTER, 1290-1330nm, THROUGH HOLE MOUNT, FC/APC CONNECTOR ROHS COMPLIANT, HEAREMATICAL SEALED PACKAGE-4
FIBER OPTIC LASER DIODE MODULE EMITTER, 1290-1330nm, THROUGH HOLE MOUNT, FC/APC CONNECTOR HERMETIC SEALED PACKAGE-4
FIBER OPTIC LASER DIODE MODULE EMITTER, 1290-1330nm, THROUGH HOLE MOUNT, ST/APC CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1290-1330nm, THROUGH HOLE MOUNT, LC/APC CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1290-1330nm, THROUGH HOLE MOUNT, SC/PC CONNECTOR
|
Analog Devices, Inc.
ITT, Corp.
|
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
