| PART |
Description |
Maker |
| KTB1367V |
BJT General Purpose Transistor
|
Korea Electronics (KEC)
|
| 2N538 2N522 2N941 2N586 2N502A 2N795 2N738 2N779 2 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 8V V(BR)CEO | TO-5
TRANSISTOR | BJT | PNP | 8V V(BR)CEO | 50MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-9
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | TO-9
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 200MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | TO-18 晶体管|晶体管|叩| 50V五（巴西）总裁|8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 30V的五（巴西）总裁| 500mA的一（c）|
|
Central Semiconductor, Corp.
Microsemi, Corp.
|
| HN1A01FUGR HN1A01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP
|
TOSHIBA
|
| 2SA1162 E000475 2SA1162GR 2SA1162-GRT5LM |
TRANS GP BJT PNP 50V 0.15A 3(2-3F1A)
TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| PS27-30 PS28-D-40 PS28-D-31 PS28-D-13 PS28-D-16 P9 |
1 ELEMENT, 1500000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 500000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 17500000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 86000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 860000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 12000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 300000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 150000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 400000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 43000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 17500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 20000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 30000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7200 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 50000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
|
Yageo, Corp.
|
| AL0410S470M-S-A AL0204AT3R3J-S-B AL0410S470M-S-B-N |
1 ELEMENT, 47 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3.3 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1.5 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 390 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 22 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 82 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 470 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 18 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 0.47 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 220 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 8.2 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 680 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 560 uH, GENERAL PURPOSE INDUCTOR
|
YAGEO CORP
|
| KTC9012S |
General Purpose Transistor
EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE SWITCHING APPLICATION
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| HN2C01FU HN2C01FUGR |
TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP 晶体管|晶体管|一对|叩| 50V五（巴西）总裁| 150毫安一c）|的TSOP
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Omron Electronics, LLC
TOSHIBA
|
| ST8504 ST8502 ST8501 ST8503 ST6001 ST13070 ST559 S |
TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 10A I(C) | TO-204AA
TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 5A I(C) | TO-204AA
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 2.5A I(C) | TO-204AA
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 5A I(C) | TO-204AA
IC,COMPLEX-EEPLD,128-CELL,20nS PROP DELAY,LDCC,84PIN,PLASTIC
Failsafe™ 2.5V/ 3.3V Zero Delay Buffer
IC FLEX 10K FPGA 30K 208-RQFP
IC MAX 7000 CPLD 256 208-RQFP
IC FLEX 10K FPGA 50K 240-RQFP
IC MCU 3K USB LS PERIPH 16-DIP
Single-PLL General-Purpose EPROM Programmable Clock Generator
IC, FPGA, 576 LES, PQFP208
2.5V or 3.3V,10- 220 MHz, Low Jitter, 5 Output Zero Delay Buffer
晶体管|晶体管|达林顿|叩| 350V五（巴西）总裁| 40A条一c）|04AE
晶体管|晶体管|达林顿|叩| 400V五（巴西）总裁| 40A条一c）|04AE
Failsafe™ 2.5V/ 3.3V Zero Delay Buffer
TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 20A I(C) | TO-204AA
TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 10A I(C) | TO-204AA
|
|
| KTC801U KTC801 |
General Purpose Transistor
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| R7S00208 R7S00408 R7S00608 R7S00808 R7S01008 R7S01 |
200V, 800A general purpose single diode
400V, 800A general purpose single diode
600V, 800A general purpose single diode
800V, 800A general purpose single diode
1000V, 800A general purpose single diode
1200V, 800A general purpose single diode
1400V, 800A general purpose single diode
1600V, 800A general purpose single diode
1800V, 800A general purpose single diode
2000V, 800A general purpose single diode
2200V, 800A general purpose single diode
|
Powerex Power Semiconductors
|
|
