| PART |
Description |
Maker |
| AT73C224-A AT73C224-B AT73C224-E AT73C224-G AT73C2 |
Power Management and Analog Companions (PMAAC)
1-CHANNEL POWER SUPPLY SUPPORT CKT, QCC32
Ultra-low Power Real-time Clock (RTC) and Backup Battery Management
Activation of the Power Management Modules via Dedicated Enable Pin
|
聚兴科技股份有限公司
ATMEL Corporation
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| MAX5945CAX-T MAX5945CAXT |
Quad Network Power Controller for Power-Over-LAN 4-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO36
|
Maxim Integrated Products, Inc.
|
| FSB147HNY |
Meets 2013 ErP Standby Power Regulation (Less than 0.5 W Consumption with 0.25 W Load) for ATX Power and LCD TV Power
|
List of Unclassifed Manufacturers
|
| T1G4012036-FL-15 |
120W Peak Power, 24W Average Power, 36V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| GSM11 |
Low Power Medical Power Supplies 11 Watt AC/DC Universal Input Power Supply
|
SL Power Electronics
|
| 2SC5935P 2SC5935 2SC5935Q |
Power Device - Power Transistors - General-Purpose power amplification
SILICON NPN TRIPLE DIFFUSION PLANAR TYPE
|
Panasonic Semiconductor
|
| IPU10N03LA Q67042-S4238 IPD10N03LA IPS10N03LA IPF1 |
OptiMOS®2 - Power packages
OptiMOS2 Power-Transistor OptiMOS2功率晶体
30 A, 25 V, 0.0104 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
INFINEON[Infineon Technologies AG]
|
| IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
Vishay Intertechnology, Inc.
|
| U5T12.12.5 R5T12.2.5 U28S15.45 U28S24.4 R28D15.22 |
Low power quad operational amplifiers
High power 3-phase auxiliary power supply evaluation board based on L5991 and ESBT STC08DE150HV
Evaluation board using 1x SD3932 for HF transmitters
VIPer12A travel adaptor 3.6W output
Analog IC 模拟IC
RF power amplifier using 1 x PD55008 N-channel enhancement-mode lateral MOSFETs 模拟IC
RF power amplifier using 1 x PD55008L 模拟IC
|
Electronic Theatre Controls, Inc.
KEMET Corporation
Bourns, Inc.
MITSUMI ELECTRIC CO., LTD.
|
|
