| PART |
Description |
Maker |
| STB12NM50ND09 STF12NM50ND |
N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP
|
STMicroelectronics
|
| CPW256A CPW255A |
TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 500V V(BR)DSS | 17.5A I(D) 晶体管| MOSFET功率模块|全桥| 500V五（巴西）直| 17.5AI（四
TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 500V V(BR)DSS | 11A I(D)
|
Electronic Theatre Controls, Inc.
|
| IRFB11N50A |
Trans MOSFET N-CH 500V 11A 3-Pin(3 Tab) TO-220AB
|
Vishay Siliconix
|
| IRF9240 |
CAP CER 250VAC 100PF X7R 1808 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
-11A, -200V, 0.500 Ohm, P-Channel Power MOSFET
-11A -200V 0.500 Ohm P-Channel Power MOSFET
11A/ -200V/ 0.500 Ohm/ P-Channel Power MOSFET
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| STP12NM50N |
N-channel 500V - 0.29- 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmeshPower MOSFET N沟道500V - 0.291A20 /计划生育，采用D2PAK - DPAK封装⑩第二代MDmesh功率MOSFET
|
STMicroelectronics N.V.
|
| IRFB18N50K |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
HEXFET? Power MOSFET
Power MOSFET(Vdss=500V, Rds(on)max=0.26ohm, Id=27A)
|
IRF[International Rectifier]
|
| IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL |
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
|
IRF[International Rectifier]
|
| IRF9640S IRF9640STRL IRF9640SPBF IRF9640STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A)
|
IRF[International Rectifier]
|
| IRFI840GLC IRFI840GLCPBF |
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.5A)
Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=4.5A)
HEXFET? Power MOSFET
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| IRFP460A IRFP460APBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=500V Rds(on)max=0.27ohm Id=20A)
Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A) 功率MOSFET（减振钢板基本\u003d 500V及的Rdson）最大值\u003d 0.27ohm，身份证\u003d 20A条）
|
IXYS Corporation
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFP32N50K IRFP32N50 IRFP32N50KPBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
From old datasheet system
HEXFET? Power MOSFET
Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A) 功率MOSFET（减振钢板基本\u003d 500V及的Rdson）典\u003d 0.135ohm，身份证\u003d 32A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STB11NM60FD STB11NM60FD-1 STB11NM60FDT4 STP11NM60F |
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
N-CHANNEL 600V - 0.40ohm - 11A TO-220 / TO-220FP/I2PAK FDmeshPower MOSFET with FAST DIODE N沟道600V 0.40ohm - 11A 220 / TO-220FP/I2PAK FDmesh？功率MOSFET，快速二极管
N-CHANNEL 600V - 0.40 OHM - 11A TO-220/TO-220FP/I2PAK/D2PAK FDMESH MOSFET (WITH FAST DIODE)
|
STMicroelectronics N.V.
ST Microelectronics
|
