| PART |
Description |
Maker |
| STU5N52K3 |
N-channel 525 V, 1.2 Ohm typ., 4.4 A SuperMESH3(TM) Power MOSFET in IPAK package
|
ST Microelectronics
|
| S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
|
Hamamatsu Photonics
|
| STL40C30H3LL |
N-channel 30 V, 0.019 Ohm typ., 10 A, P-channel 30 V, 0.024 Ohm typ., 8 A STripFET(TM) V Power MOSFET in a PowerFLAT(TM) 5x6 d. i. package
|
ST Microelectronics
|
| S2744 S2744-08 S2744-09 S3588-08 S3588-09 |
MOSFET, Switching; VDSS (V): 150; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.089; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
Si PIN photodiode Large area sensors for scintillation detection 硅PIN光电二极管的大面积闪烁探测传感器
|
Hamamatsu Photonics K.K.
|
| STF5N52U STD5N52U STI5N52U |
N-channel 525 V, 1.28 ohm, 4.4 A, DPAK, TO-220FP, I2PAK UltraFASTmesh Power MOSFET
|
STMicroelectronics
|
| CY7C1362B-166AI CY7C1362B-166AC CY7C1360B-200BGC C |
CONNECTOR ACCESSORY 256K X 36 CACHE SRAM, 3.5 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 2.8 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3 ns, PQFP100
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (S)
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (L)- (2)
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| STW15N95K5 STF15N95K5 STP15N95K5 |
N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-247 package
N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-220FP package
N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-220 package
|
ST Microelectronics
|
| STP4N80K5 STD4N80K5 STF4N80K5 STU4N80K5 |
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220 package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
|
ST Microelectronics
|
| IRFP23N50LPBF |
23 A, 500 V, 0.235 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190ヘ , Trr typ. = 170ns , ID = 23A )
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190Ω , Trr typ. = 170ns , ID = 23A )
|
International Rectifier
|
| STB15N80K5 STP15N80K5 STF15N80K5 |
N-channel 800 V, 0.3 ohm typ., 14 A SuperMESH 5 Power MOSFET
|
STMicroelectronics
|
| STU4N62K3 STP4N62K3 STI4N62K3 STF4N62K3 STFI4N62K3 |
N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in I2PAK package
N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
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