| PART |
Description |
Maker |
| MJD44H11 MJD44H11-001 MJD45H11-001 MJD45H11T4G MJD |
SILICON POWER TRANSISTORS 8 A, 80 V, NPN, Si, POWER TRANSISTOR
Power 10A 80V PLA NPN
Power 10A 80V PLA PNP
|
ONSEMI[ON Semiconductor]
|
| AM27S21APC |
1KBIT(256X4)PROM 30NS 16BR PLA 256 X 4 OTPROM, 30 ns, PDIP16
|
Advanced Micro Devices, Inc.
|
| 15-80-0129 0015800129 A-70567-0276 |
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 12 Circuits, 0.38μm (15μ) Gold, (Au) Selective Plating
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 12 Circuits, 0.38渭m (15渭) Gold, (Au) Selective Pla
Molex Electronics Ltd.
|
Molex Electronics Ltd.
|
| CX28394-22 CX28395-18 CX28395-19 CX28394 CX28395 C |
Ultraframer DS3/E3/DS2/E2/DS1/E1/DS0 DATACOM, FRAMER, PQFP128
DIODE SWITCHING DUAL ISOLATED 70V 250mA-Io 150mW 4ns-trr SOT-563 3K/REEL
POT 5K OHM 12MM VERT PLA BUSHING
DIODE SWITCH 75V 200MW SOT323
DIODE SWITCHING SINGLE 70V 250mA-Io 200mW 4ns-trr SOT-323 3K/REEL
Quad/x16/OctalT1/E1/J1 Framers
Quad/x16/Octal?T1/E1/J1 Framers
Quad/x16/Octal-T1/E1/J1 Framers
|
Conexant Systems, Inc.
|
| A-70567-0349 15-80-1221 0015801221 |
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 22 Circuits, 0.76渭m (30渭) Gold, (Au) Selective Pla
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 22 Circuits, 0.76μm (30μ) Gold, (Au) Selective Plating
|
Molex Electronics Ltd.
|
| 0010897082 010-89-7082 |
2.54mm (.100") Pitch C-Grid庐 Breakaway Header, Dual Row, Vertical, High Temperature, 8 Circuits, 0.38渭m (15渭") Gold (Au) Selective Plating, Tin (Sn) PC Tail Pla
2.54mm (.100) Pitch C-Grid? Breakaway Header, Dual Row, Vertical, High Temperature, 8 Circuits, 0.38μm (15μ) Gold (Au) Selective Plating, Tin (Sn) PC Tail Plating, 2.72mm (.107) PC Tail
|
Molex Electronics Ltd.
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| TA8263BH TA8263 |
Max Power 43 W BTL 4 ch Audio Power IC
Max Power 43 W BTL ??4 ch Audio Power IC
Max Power 43 W BTL 】 4 ch Audio Power IC
IC,AUDIO AMPLIFIER,QUAD,BIPOLAR,ZIP,25PIN,PLASTIC
Max Power 43 W BTL × 4 ch Audio Power IC
Max Power 43 W BTL x 4 ch Audio Power IC
|
Toshiba Semiconductor
|
| T1G4012036-FL-15 |
120W Peak Power, 24W Average Power, 36V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
|
