| PART |
Description |
Maker |
| HMT451S6MMP8C-G7 HMT451S6MMP8C-S6 HMT451S6MMR8C-G7 |
204pin DDR3 SDRAM SODIMM
512M X 64 DDR DRAM MODULE, DMA204 LEAD FREE, SODIMM-204
|
Hynix Semiconductor, Inc.
|
| M470T6464AZ3-CLE6_D5_CC M470T5669AZ0-CLE6/D5/CC M4 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC
|
Samsung semiconductor
|
| HYMD18M725AL6-K HYMD18M725AL6-H HYMD18M725A6-H HYM |
SDRAM|DDR|8MX72|CMOS|DIMM|200PIN|PLASTIC
8M X 72 DDR DRAM MODULE, 0.75 ns, DMA200 67.60 X 31.75 X 1 MM, SODIMM-200
8M X 72 DDR DRAM MODULE, 0.8 ns, DMA200 67.60 X 31.75 X 1 MM, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| HMT125S6AFP8C-G7 HMT125S6AFP8C-G8 HMT125S6AFP8C-H8 |
204pin DDR3 SDRAM SODIMMs
128M X 64 DDR DRAM MODULE, 20 ns, ZMA203 LEAD FREE. HALOGEN FREE, SODIMM-204
64M X 64 DDR DRAM MODULE, 20 ns, ZMA203 LEAD FREE. HALOGEN FREE, SODIMM-204
DDR DRAM MODULE, ZMA203 LEAD FREE. HALOGEN FREE, SODIMM-204
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S172 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data sheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存4Banks4K的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M464S0924CT2 M464S1724CT2 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Datasheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| M470T6554CZ0-CCC M470T6554CZ0-CD5 M470T6554CZ0-CE6 |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC
40 characters x 2 Lines, 5x7 Dot Matric Character and Cursor 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC
PATCHCORD SQ SCKT-ALLIG CLIP RED
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M470L1624FU0-CA2 M470L1624FU0-CB3 |
DDR SDRAM SODIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M470L3224FU0 M485L1624FU0-CB3 M470L1624FU0-CA2 M47 |
DDR SDRAM SODIMM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| SDN03264C1CF1MT-50 SDN03264C1CF1MT-60 |
256MB DDR . SDRAM SoDIMM
|
List of Unclassifed Manufac...
|
| KMM464S424CT1 |
PC100 144pin SDRAM SODIMM
|
Samsung Semiconductor
|
| KMM464S1724T1 |
PC100 144pin SDRAM SODIMM
|
Samsung Semiconductor
|
