| PART |
Description |
Maker |
| MTE2050-OH1 |
CAP 10PF 100V 5% NP0(C0G) RAD.10 .15X.15 BULK 红外线发射器
5MM WATER CLEAR IR EMITTER
Infrared Emitter
|
Marktech Corporate
Marktech Optoelectronics
|
| TD62551 TD62551S TD62553S E005673 TD62555S TD62554 |
4CH SINGLE DRIVER : COMMEN EMITTER
From old datasheet system
4CH SINGLE DRIVER : COMMON EMITTER
4CH SINGLE DIRVER : COMMON EMITTER 4路单DIRVER：共发射
|
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| SLT1440-H885A SLT1440-H260A SLT1446-F850A SLT1446- |
FIBER OPTIC DFB LASER MODULE EMITTER, 1368-1372nm, THROUGH HOLE MOUNT
FIBER OPTIC DFB LASER MODULE EMITTER, 1408-1412nm, THROUGH HOLE MOUNT
FIBER OPTIC DFB LASER MODULE EMITTER, 1508-1512nm, THROUGH HOLE MOUNT
FIBER OPTIC DFB LASER MODULE EMITTER, 1607-1613nm, THROUGH HOLE MOUNT
FIBER OPTIC DFB LASER MODULE EMITTER, 1568-1572nm, THROUGH HOLE MOUNT
|
|
| 2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
| 2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A.
Transistors
|
Usha India Ltd.
|
| SLT4466-XP/RH2-H885A SLT4460-CP/RH2-H260A SLT4466- |
FIBER OPTIC LASER DIODE MODULE EMITTER, 1368-1372nm, 2500Mbps, PANEL MOUNT, THROUGH HOLE MOUNT ROHS COMPLIANT PACKAGE
FIBER OPTIC LASER DIODE MODULE EMITTER, 1408-1412nm, 2500Mbps, THROUGH HOLE MOUNT, SC/PC CONNECTOR ROHS COMPLIANT PACKAGE
FIBER OPTIC LASER DIODE MODULE EMITTER, 1367-1373nm, 2500Mbps, PANEL MOUNT, THROUGH HOLE MOUNT
FIBER OPTIC LASER DIODE MODULE EMITTER, 1348-1352nm, 2500Mbps, PANEL MOUNT, THROUGH HOLE MOUNT
FIBER OPTIC LASER DIODE MODULE EMITTER, 1528-1532nm, 2500Mbps, THROUGH HOLE MOUNT, SC/PC CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1528-1532nm, 2500Mbps, PANEL MOUNT, THROUGH HOLE MOUNT
|
Japan Aviation Electronics Industry, Ltd.
Cooper Bussmann, Inc.
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TD62593 TD62593AFN TD62594AFN TD62597AFN TD62598AF |
8CH SINGLE DRIVER : COMMON EMITTER 8路单驱动：共发射
8ch SINGLE DRIVER:COMMON EMITTER
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| PS2533-1 PS2533-1-V PS2533-2 PS2533-2-V PS2533-4 P |
High Collector To Emitter Voltage Photocoupler(高集电极到发射极电压光电耦合
HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES
|
NEC Corp.
NEC[NEC]
|
| STE07DE220 E07DE220 |
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07з power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07搂? power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07 power module
|
ST Microelectronics
STMicroelectronics
|
| STE70IE120 |
Monolithic Emitter Switched Bipolar Transistor ESBT? 1200 V - 70 A - 0.014 Ω Power Module
Monolithic Emitter Switched Bipolar Transistor ESBT 1200V 70A 0.014Ohm Power Module
Monolithic Emitter Switched Bipolar Transistor ESBT㈢ 1200 V - 70 A - 0.014 ヘ Power Module
|
ST Microelectronics, Inc.
STMICROELECTRONICS[STMicroelectronics]
|
| STC06IE170HV |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?/a>
Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15 Ohm
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17з
|
http://
ST Microelectronics, Inc.
STMicroelectronics
|
