| PART |
Description |
Maker |
| IRC-PB IRC-PB151 IRC-PB21 IRC-PBCF IRC-PB301 |
Infrarot-Temperatur-Messger?te
|
ASM GmbH
|
| IRC-PU2.2 |
Infrarot-Temperatur-Messger?te
|
ASM GmbH
|
| KVR8X72V84-50EG |
Memory Module Specification (EDO Memory Module)
|
Electronic Theatre Controls, Inc.
|
| V16DJX432BLT V16DJ432BLT |
4M X 32 High Performance EDO Memory Module(4M X 32高性能EDO存储器模
4M X 32 High Performance FPM Memory Module(4M X 32高性能FPM存储器模
|
Mosel Vitelic, Corp.
|
| HYM324020GL-60 HYM324020GL-50 HYM324020GD-60 HYM32 |
4M x 32 -Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
4M x 32 Bit DRAM Module (SO-DIMM)
|
Infineon
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KVR100X64C364 KVR100X64C3_64 KVR100X64C3/64 |
Memory Module Specification
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| 69F1608RPFH 69F1608RPFK |
128 Megabit (16M x 8-Bit) Flash Memory Module 16M X 8 FLASH 5V PROM MODULE, 35 ns, DFP24
|
Maxwell Technologies, Inc
|
| KMM5362000B KMM5362000BG |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
| KMM5362000BH |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
| 32MB08F-02 |
(32MB08F-01/-02) 32MB Flash Memory Module
|
Hybrid Design Associates
|
