| PART |
Description |
Maker |
| 1011GN-250E 1011GN-250EL 1011GN-250EP |
GaN Transistors
|
Microsemi
|
| 1011GN-125E 1011GN-125EL |
GaN Transistors
|
Microsemi
|
| 0912GN-600 |
GaN Transistors
|
Microsemi
|
| 0912GN-650V |
GaN Transistors
|
Microsemi
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| CGH40025F |
25 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| CGH40035F-AMP |
35 W, RF Power GaN HEMT
|
Cree, Inc
|
| AML811P5012 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML056P4511 |
Gallium Nitride (GaN)
|
Microsemi
|
| QPL1002 QPL1002EVB |
0.03 ?3 GHz GaN LNA
|
TriQuint Semiconductor
|
| GP1001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| PDU-G105A-SM |
UV Enhanced GaN Detectors
|
Advanced Photonix
|
|
