| PART |
Description |
Maker |
| IDT72V70200 72V70200_DS_72847 IDT72V70200PQF IDT72 |
512 x 512 TSI, 16 I/O at 2Mbps, 3.3V
512 x 512 Time Slot Interchange Digital Switch, 3.3V
TSI-TDM Switches
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 512 x 512
|
IDT[Integrated Device Technology]
|
| LH28F800BGH-L LH28F800BGR-TL85 LH28F800BGR-TL12 LH |
Aluminum Polymer Radial Lead Capacitor; Capacitance: 1800uF; Voltage: 4V; Case Size: 8x12 mm; Packaging: Bulk 8 M位（512 KB的16）SmartVoltage闪存
RES CURRENT SENSE .025 OHM 1W 1% 8 M位（512 KB的16）SmartVoltage闪存
8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位（512 KB的16）SmartVoltage闪存
|
http://
Sharp, Corp.
Sharp Corporation
Sharp Electrionic Compo...
|
| LH28F800SGH-L LH28F800SG-L |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 8 M位（512 KB的16）SmartVoltage闪存
8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位（512 KB的16）SmartVoltage闪存
|
Sharp Corporation
Sharp, Corp.
|
| IDT72V70200PFGBLANK IDT72V7020008 IDT72V70200PFBLA |
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 512 x 512
|
Integrated Device Technology
|
| LH540225 |
512 x 18 / 1024 x 18 Synchronous FIFO 512 ×一千?二十四分之一十八× 18同步FIFO
|
Sharp, Corp.
|
| S7171-0909-01 |
512 × 512 pixels, back-thinned FFT-CCD
|
Hamamatsu Corporation
|
| TS4GJFT3 |
4GB USB2.0 JetFlash?T3
|
Transcend Information. Inc.
|
| H5TQ4G43MFR H5TQ4G63MFR-PBC H5TQ4G43MFR-H9C H5TQ4G |
4Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| HYS72T32000HR-3.7-A HYS72T32000HR-5-A HYS72T64001H |
256MB - 4GB, 240pin
|
Infineon
|
| TS4GJFV30 |
4GB USB2.0 JetFlash鈩30
|
Transcend Information. Inc.
|
| H5TQ4G63AFR-H9C H5TQ4G63AFR-RDC H5TQ4G63AFR-TEC H5 |
4Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| MSM64Q424-NGS-K MSM64422-XXXMS-K MSM64424-XXXMS-K |
Built-in 256/512-Bit EEPROM and LCD Driver 4-Bit Microcontroller 内置256/512-Bit EEPROM和LCD驱动位微控制
|
OKI SEMICONDUCTOR CO., LTD.
|
