| PART |
Description |
Maker |
| LSL9R30120G2 ISL9R30120G2 ISL9R30120G2NL |
30A, 1200V STEALTH DIODE, TO247 PACKAGE
30A, 1200V Stealth⑩ Diode
ISL9R30120G2
30A, 1200V Stealth?/a> Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| SB300-09 |
90V/ 30A Rectifier
90V, 30A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| BU208A ON0232 |
5.0 AMPERES NPN SILICON POWER TRANSISTOR 700 VOLTS 5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-204AA
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semiconductor
Motorola, Inc
|
| ZB4CS-700-10W |
Power wer Splitter/Combiner 4 Way-0° 400 to 700 MHz
Power wer Splitter/Combiner 4 Way-0∑ 400 to 700 MHz
Power wer Splitter/Combiner 4 Way-0 400 to 700 MHz
Power wer Splitter/Combiner 4 Way-0400 to 700 MHz 400 MHz - 700 MHz RF/MICROWAVE COMBINER, 0.8 dB INSERTION LOSS
|
MINI[Mini-Circuits]
|
| LD7217W LD7217S LD7217 |
6 GHz, 600 W/700 W CW, PPM FOCUSING, HIGH POWER GAIN 6千兆赫，600 W/700 W连续，分之为重点，高功率增益
6 GHz / 600 W/700 W CW / PPM FOCUSING / HIGH POWER GAIN
6 GHz 600 W/700 W CW PPM FOCUSING HIGH POWER GAIN
|
NEC, Corp.
NEC[NEC]
|
| STD30NE06L 6044 STD30NE06LT4 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 30A条（丁）|52AA
N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET
From old datasheet system
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| 710 723 724 725 721X 724X 722 710X |
WILMAR垄芒 Protective Relays - 700 Series
WILMAR Protective Relays - 700 Series
WILMAR?Protective Relays - 700 Series
|
Tyco Electronics
|
| STD2NK70Z STD2NK70ZT4 STD2NK70Z-1 |
N-CHANNEL 700 V - 6 Ohm - 1.6 A DPAK/IPAK Zener-Protected SuperMESH MOSFET
From old datasheet system
N-CHANNEL 700 V - 6 W - 1.6 A DPAK/IPAK Zener-Protected SuperMESHTM MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| IRFP250N IRFP250 |
Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)
N-Channel(Hexfet Transistors)
Power MOSFET(Vdss = 200 V Rds(on)=0.075ohm Id=30A)
Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET（减振钢板基本\u003d 200第五的Rdson）\u003d 0.075ohm，身份证\u003d 30A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| MD22-0002-MUC |
700-100 MHz surface mount mixer
Surface Mount Mixer 700 - 1000 MHz
|
MA-Com
MACOM[Tyco Electronics]
|
