| PART |
Description |
Maker |
| C3D04060E |
4 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-252 TO-252, 3 PIN
|
Cree, Inc.
|
| SUD45P03-15-E3 |
13 A, 30 V, 0.024 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 TO-252, 3 PIN
|
Vishay Intertechnology, Inc.
|
| FQD7N20LTF |
200V N-Channel Logic Level QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 5.5 A, 200 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
Fairchild Semiconductor, Corp.
|
| KSH112GTMSB82051 |
NPN Silicon Darlington Transistor; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252
|
Fairchild Semiconductor, Corp.
|
| KSH44H11TM |
NPN Epitaxial Silicon Transistor; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-252
|
Fairchild Semiconductor, Corp.
|
| BTA204M-800F BTA204M-500D BTA204M-500E BTA204M-500 |
Three quadrant triacs guaranteed commutation 500 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252
Three quadrant triacs guaranteed commutation(三象限双向确保换向可控硅) 500 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252
Three quadrant triacs guaranteed commutation 500 V, 4 A, TRIAC, TO-252
Three quadrant triacs guaranteed commutation(三象限双向确保换向可控硅) 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252
Transient Voltage Suppressor Diodes
From old datasheet system
TRIAC|800V V(DRM)|4A I(T)RMS|SOT-428
TRIAC|500V V(DRM)|4A I(T)RMS|SOT-428
TRIAC|600V V(DRM)|4A I(T)RMS|SOT-428
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| STDID5B 7121 |
N-CHANNEL 55V - 0.1 OHM -12A TO-252 STRIPFET POWER MOSFET
N-CHANNEL 55V - 0.1 OHM -12A TO-252 STRIPFET POWER MOSFET
From old datasheet system
N - CHANNEL 55V - 0.1 ohm - 12A TO-252 STripFET POWER MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| TO-252 |
TO-252 (MP-3Z)
|
Unknow
ETC
|
| STD17N05 STD17N06 STD17N05T4 STD17N06T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 17A I(D) | TO-252 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 17A条（丁）|52
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 17A I(D) | TO-252 晶体管| MOSFET的| N沟道| 50V五（巴西）直| 17A条（丁）|52
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
|
ON Semiconductor
STMICROELECTRONICS[STMicroelectronics]
|
| FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
| CJU05N60B |
TO-252-2L Plastic-Encapsulate MOSFETS
|
TY Semiconductor Co., Ltd
|
|
